Simple Pulses for Universal Quantum Computation with a Heisenberg ABAB Chain

Recently Levy has shown that quantum computation can be performed using an ABAB.. chain of spin-1/2 systems with nearest-neighbor Heisenberg interactions. Levy notes that all necessary elementary computational `gates' can be achieved by using spin-resonance techniques involving modulating the spin-spin interaction strength at high frequency. Here we note that, as an alternative to that approach, it is possible to perform the elementary gates with simple, non-oscillatory pulses.Comment: 3 pages including 2 fig

Surface recombination measurements on III–V candidate materials for nanostructure light-emitting diodes

Surface recombination is an important characteristic of an optoelectronic material. Although surface recombination is a limiting factor for very small devices it has not been studied intensively. We have investigated surface recombination velocity on the exposed surfaces of the AlGaN, InGaAs, and InGaAlP material systems by using absolute photoluminescence quantum efficiency measurements. Two of these three material systems have low enough surface recombination velocity to be usable in nanoscale photonic crystal light-emitting diodes

Effect of exchange interaction on fidelity of quantum state transfer from a photon qubit to an electron-spin qubit

We analyzed the fidelity of the quantum state transfer (QST) from a photon-polarization qubit to an electron-spin-polarization qubit in a semiconductor quantum dot, with special attention to the exchange interaction between the electron and the simultaneously created hole. In order to realize a high-fidelity QST we had to separate the electron and hole as soon as possible, since the electron-hole exchange interaction modifies the orientation of the electron spin. Thus, we propose a double-dot structure to separate the electron and hole quickly, and show that the fidelity of the QST can reach as high as 0.996 if the resonant tunneling condition is satisfied.Comment: 5 pages, 4 figures, to be published in Phys. Rev. B Rapid Communication

Voltage Control of Exchange Coupling in Phosphorus Doped Silicon

Motivated by applications to quantum computer architectures we study the change in the exchange interaction between neighbouring phosphorus donor electrons in silicon due to the application of voltage biases to surface control electrodes. These voltage biases create electro-static fields within the crystal substrate, perturbing the states of the donor electrons and thus altering the strength of the exchange interaction between them. We find that control gates of this kind can be used to either enhance, or reduce the strength of the interaction, by an amount that depends both on the magnitude and orientation of the donor separation.Comment: 5 Pages, 5 Figure

Molecular orbital calculations of two-electron states for P donor solid-state spin qubits

We theoretically study the Hilbert space structure of two neighbouring P donor electrons in silicon-based quantum computer architectures. To use electron spins as qubits, a crucial condition is the isolation of the electron spins from their environment, including the electronic orbital degrees of freedom. We provide detailed electronic structure calculations of both the single donor electron wave function and the two-electron pair wave function. We adopted a molecular orbital method for the two-electron problem, forming a basis with the calculated single donor electron orbitals. Our two-electron basis contains many singlet and triplet orbital excited states, in addition to the two simple ground state singlet and triplet orbitals usually used in the Heitler-London approximation to describe the two-electron donor pair wave function. We determined the excitation spectrum of the two-donor system, and study its dependence on strain, lattice position and inter donor separation. This allows us to determine how isolated the ground state singlet and triplet orbitals are from the rest of the excited state Hilbert space. In addition to calculating the energy spectrum, we are also able to evaluate the exchange coupling between the two donor electrons, and the double occupancy probability that both electrons will reside on the same P donor. These two quantities are very important for logical operations in solid-state quantum computing devices, as a large exchange coupling achieves faster gating times, whilst the magnitude of the double occupancy probability can affect the error rate.Comment: 15 pages (2-column

Multi-Qubit Gates in Arrays Coupled by 'Always On' Interactions

Recently there has been interest in the idea of quantum computing without control of the physical interactions between component qubits. This is highly appealing since the 'switching' of such interactions is a principal difficulty in creating real devices. It has been established that one can employ 'always on' interactions in a one-dimensional Heisenberg chain, provided that one can tune the Zeeman energies of the individual (pseudo-)spins. It is important to generalize this scheme to higher dimensional networks, since a real device would probably be of that kind. Such generalisations have been proposed, but only at the severe cost that the efficiency of qubit storage must *fall*. Here we propose the use of multi-qubit gates within such higher-dimensional arrays, finding a novel three-qubit gate that can in fact increase the efficiency beyond the linear model. Thus we are able to propose higher dimensional networks that can constitute a better embodiment of the 'always on' concept - a substantial step toward bringing this novel concept to full fruition.Comment: 20 pages in preprint format, inc. 3 figures. This version has fixed typos and printer-friendly figures, and is to appear in NJ

Solid-State Quantum Computer Based on Scanning Tunneling Microscopy

We propose a solid-state nuclear spin quantum computer based on application of scanning tunneling microscopy (STM) and well-developed silicon technology. It requires the measurement of tunneling current modulation caused by the Larmor precession of a single electron spin. Our envisioned STM quantum computer would operate at the high magnetic field ($\sim 10$T) and at low temperature $\sim 1$K.Comment: 3pages RevTex including 2 figure

Gate-Controlled Electron Spin Resonance in a GaAs/AlGaAs Heterostructure

The electron spin resonance (ESR) of two-dimensional electrons is investigated in a gated GaAs/AlGaAs heterostructure. We found that the ESR resonance frequency can be turned by means of a gate voltage. The front and back gates of the heterostructure produce opposite g-factor shift, suggesting that electron g-factor is being electrostatically controlled by shifting the equilibrium position of the electron wave function from one epitaxial layer to another with different g-factors

Counterintuitive transitions between crossing energy levels

We calculate analytically the probabilities for intuitive and counterintuitive transitions in a three-state system, in which two parallel energies are crossed by a third, tilted energy. The state with the tilted energy is coupled to the other two states in a chainwise linkage pattern with constant couplings of finite duration. The probability for a counterintuitive transition is found to increase with the square of the coupling and decrease with the squares of the interaction duration, the energy splitting between the parallel energies, and the tilt (chirp) rate. Physical examples of this model can be found in coherent atomic excitation and optical shielding in cold atomic collisions